Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots

Citation
M. Bayer et al., Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots, PHYS REV L, 82(8), 1999, pp. 1748-1751
Citations number
27
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
8
Year of publication
1999
Pages
1748 - 1751
Database
ISI
SICI code
0031-9007(19990222)82:8<1748:EAHGFA>2.0.ZU;2-2
Abstract
Self-assembled In0.60Ga0.40As quantum dots (QD's) have been studied by sing le dot magnetophotoluminescence spectroscopy (B less than or equal to 8 T). At B = 0 a splitting of the exciton (X) emission is observed which we ascr ibe to an asymmetry of the confinement potential. With increasing B the emi ssion splits into a quadruplet corresponding to the m = +/-2 and +/-1 X sta tes, which originates from a reduction of the cubic symmetry of the QD's. F rom the spectroscopic data we obtain values for the electron (e) and hole ( h) g factors. We also determine the X singlet-triplet splitting which is fo und to be enhanced over bulk values by about an order of magnitude due to t he increase of the e-h overlap in the QD's.