M. Bayer et al., Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots, PHYS REV L, 82(8), 1999, pp. 1748-1751
Self-assembled In0.60Ga0.40As quantum dots (QD's) have been studied by sing
le dot magnetophotoluminescence spectroscopy (B less than or equal to 8 T).
At B = 0 a splitting of the exciton (X) emission is observed which we ascr
ibe to an asymmetry of the confinement potential. With increasing B the emi
ssion splits into a quadruplet corresponding to the m = +/-2 and +/-1 X sta
tes, which originates from a reduction of the cubic symmetry of the QD's. F
rom the spectroscopic data we obtain values for the electron (e) and hole (
h) g factors. We also determine the X singlet-triplet splitting which is fo
und to be enhanced over bulk values by about an order of magnitude due to t
he increase of the e-h overlap in the QD's.