Quantitative determination of dislocation-induced strain at the surface of(001) silicon-on-insulator

By rapidly heating and cooling a silicon-on-insulator wafer, we show that d islocations are created at the interface between the thin silicon slab and the underlying oxide. Using low-energy electron microscopy, we determine th e strain held these dislocations produce at the surface of the silicon slab and show that they can be used as monitors of heteroepitaxy-induced change s in the surface strain. [S0031-9001(99)08482-3].