Morphology of quench condensed Pb films near the insulator to metal transition

Citation
Kl. Ekinci et Jm. Valles, Morphology of quench condensed Pb films near the insulator to metal transition, PHYS REV L, 82(7), 1999, pp. 1518-1521
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
7
Year of publication
1999
Pages
1518 - 1521
Database
ISI
SICI code
0031-9007(19990215)82:7<1518:MOQCPF>2.0.ZU;2-I
Abstract
We present in situ scanning tunneling microscopy topographs of Pb films, fo rmed by vapor deposition onto cold (T < 20 K), inert substrates, near their insulator to metal transition; At the critical mass deposited thickness fo r conduction, d(G) congruent to 5.2 nm, the films consist of approximately two layers of nanoclusters with diameter, 2r approximate to 20 nm and heigh t, 3.5 less than or equal to h less than or equal to 5.5 nm. We discuss how the nanocluster size and formation mechanism dictate the need fur two laye rs to form in order for conduction to commence. [S0031-9007(99)08430-6].