Low energy electron microscopy images of Si(111) surfaces during submonolay
er deposition of Co or Ni at temperatures near 700 degrees C reveal a phase
separation into a disordered "ring cluster" phase and the ordered 7 x 7 re
construction. For Co/Si(111) we find that temperature-driven phase separati
ons at a fixed dose are reversible and occur at a fixed surface coverage. T
he shape of the phase boundary reveals a repulsive interaction between Go-c
ontaining ring clusters in the disordered phase. For Ni/Si(111), dissolutio
n into the bulk prevents reversible separations between surface phases. At
coverages close to 1/7 ML an ordered close-packed root 7 x root 7 ring clus
ter phase forms for Co/Si(111), but not for Ni/Si(111). The root 7 x root 7
phase disappears irreversibly on heating, due to the nucleation and growth
of stable silicide islands.