In this paper a review of recent progress achieved in the domain of MX2 fil
ms (M = Mo, W; X = Se, S) is presented. The MoS2 is essentially discussed.
It is shown that the emerging interest in the use of MX2 thin films as abso
rbing layer in photovoltaic cells has induced significant improvements of t
he crystalline and optoelectrical properties of these films. Some years ago
the films obtained were crystallized in the 2H-MoS2 structure but the size
of their crystallites was small and the samples were poorly photoconductiv
e. Recently many works have shown that, whatever the deposition technique u
sed, textured films with large grains and good photoconductive properties c
ould be obtained when a thin nickel layer is used. During the post annealin
g treatment, this thin nickel layer diffuses all over the thickness of the
films. It is proposed that systematically the crystallization process of MX
2 films is a two-step process. The primary crystallization corresponds to s
mall crystallites formation and the secondary crystallization corresponds t
o large ordered domains growth by coalescence of the small crystallized dom
ains. This secondary crystallization process is facilitated by the presence
of Van der Waals surfaces parallel to the plane of the substrate. Moreover
, this effect is strongly improved in the presence of nickel which allows t
he obtention of high quality films. The electrical properties of these film
s are interpreted with the help of grain boundary theories. (C) 1999 Elsevi
er Science B.V. All rights reserved.