Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4

Citation
H. Kouta et Y. Kuwano, Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4, APPL OPTICS, 38(6), 1999, pp. 1053-1057
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
38
Issue
6
Year of publication
1999
Pages
1053 - 1057
Database
ISI
SICI code
0003-6935(19990220)38:6<1053:ATRSCI>2.0.ZU;2-K
Abstract
When a visible laser beam passes through beta-BaB2O4 (BBO), scattered light can be observed along the beam within the crystal. Scattering centers caus ed by structural defects in Czochralski-grown BBO can be reduced by 95% by annealing at 920 degrees C. In the flux-grown BBO, centers actually increas e by the same annealing because the process causes microcracks and/or secon dary inclusions. It is shown that annealed Czochralski-grown BBO is superio r to flux-grown BBO (annealed or as-grown) in terms of optical loss. (C) 19 99 Optical Society of America.