The Cr3+:LiCaAlF6 (Cr:LiCAF) and Cr3+:LiSrAlF6 (Cr:LiSAF) laser host crysta
ls can be grown by the CZOCHRALSKI technique. Problems result from the evap
oration of lithium-aluminium-fluorides during the growth process and a corr
esponding stoichiometry shift of the melt towards the CaF2 (SrF2) corner of
the ternary concentration triangle. Both Cr:LiCAF, and to a lower extend a
lso Cr:LiSAF, contain micron-sized defects that disturb the lasing efficien
cy heavily. The defects are assumed to be related to water and/or oxygen im
purities within the starting materials and growth atmosphere and to peculia
rities of the LiF - CaF2 - AlF3 ternary phase diagram.