Low-voltage electro-optic modulator in SBN : 60

Authors
Kwon, O Eknoyan, O Taylor, HF Neurgaonkar, RR
Citation
O. Kwon et al., Low-voltage electro-optic modulator in SBN : 60, ELECTR LETT, 35(3), 1999, pp. 219-220
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
3
Year of publication
1999
Pages
219 - 220
Database
ISI
SICI code
0013-5194(19990204)35:3<219:LEMIS:>2.0.ZU;2-R
Abstract
Electro-optic intensity modulators have been produced in LiNbO3, LiTaO3, an d SBN:60 substrates using strain-induced waveguides formed by the magnetron deposition of a surface metal film. Record low pi-voltage (0.25V) and low propagation loss (< 0.2dB/cm) have been demonstrated in SBN:60.