GaAs-compatible surface-micromachined RF MEMS switches

Authors
Hyman, D Schmitz, A Warneke, B Hsu, TY Lam, J Brown, J Schaffner, J Walston, A Loo, RY Tangonan, GL Mehregany, M Lee, J
Citation
D. Hyman et al., GaAs-compatible surface-micromachined RF MEMS switches, ELECTR LETT, 35(3), 1999, pp. 224-226
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
3
Year of publication
1999
Pages
224 - 226
Database
ISI
SICI code
0013-5194(19990204)35:3<224:GSRMS>2.0.ZU;2-W
Abstract
A MEMS switch has been developed for microwave applications. The switch has an actuation of 30V, a response time of 20 mu s, and mechanical robustness to withstand 10(9) actuations. An RF performance with >50dB isolation belo w 2GHz and <0.2dB insertion loss from DC to 40GHz has been measured.