19GHz vertical Si p-channel MOSFET

Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using s elective low pressure chemical vapour deposition (LPCVD) epitaxial growth a nd conventional i-line lithography. The layout, called VOXFET, reduces ate to source/drain overlap capacitances, thus improving high speed application s. Transistors with a gale width of 12 mu m and gate oxide thickness of 10n m show transconductances g(m) of 200mS/mm and measured cutoff frequencies o f f(T) = 8.7 GHz and f(MAX) = 19.2 GHz.