Temperature dependence of lasing characteristics for long-wavelength (1.3-mu m) GaAs-based quantum-dot lasers

Data are presented on the temperature dependence of 1.3-mu m wavelength qua ntum-dot (QD) lasers, A low-threshold current density of 90 A/cm(2) is achi eved at room temperature using high reflectivity coatings, Despite the low- threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occur ring above similar to 225 K. Our results suggest that very low threshold cu rrent density (less than or equal to 20 A/cm(2)) can be achieved at room te mperature from 1.3-mu m QD lasers, once nonradiative recombination is elimi nated.