Delay time in GaAs high-power photoconductive switches

The delay time defined as the time interval between the beginning of optica l illumination and the onset of switching in photocurrent in gallium arseni de (GaAs) high-power photoconductive switches is studied on the basis of el ectroabsorption caused by absorption edge shifting due to bandgap narrowing , The influences of the initial open-state held, the laser wavelength and t he temperature are given. The results show it is the reflection and the tra nsmission of the switch semiconductor slab indicated by absorption fraction express the absorption rate of the illumination energy by the switch.