An optimized bidirectional lightning surge protection semiconductor device

This paper addresses the analysis of a bidirectional lightning surge protec tion power semiconductor device called the bidirectional breakover diode (B BD), The BED has high-speed response, high current capability, and low cond uction and snitching losses. The influence of the layout on the trigger and holding current values has been studied by means of two-dimensional (2-D) electrical simulations. The length of the peripheral N+ diffusion together Kith the location of the edge contact between the metallization and the P+/ N+ diffusions are crucial in optimizing the trigger mechanism and the trigg er and holding current values, The turn on of the inner cells has also been analyzed by numerical simulations, showing the effect of the central paras itic P+NP+ bipolar transistor at the initial phase of the turn on process. Experimental results have been obtained from fabricated 180-V BED devices w ith holding current values in the range of 150-250 mA. The BED surge protec tion capability has been corroborated by impulsive tests using a 10/1000 mu s, 50 A, 1000 V, current pulse. In addition, transient losses have been mo nitored in order to improve the surge protection capability of the device. Finally, the static and dynamic BED thermal behavior has also been analyzed .