Effect of HgCdTe-passivant interface properties on the responsivity performance of photoconductive detectors

The variations in the responsivity, minority carrier lifetime and shunt res istance (arising due to surface accumulation) have been measured as a funct ion of the gate potential in a HgCdTe gated photoconductor test structure. The measured variations have been shown to be in very good agreement with o ur model previously published. It is predicted that the optimisation of the trap density and fixed charges at the HgCdTe-passivant interface can lead to improvements in the response uniformity of the detector elements in an a rray. (C) 1999 Elsevier Science B.V. All rights reserved.