Generation of native defects in n-type Hg0.8Cd0.2Te crystals during low-temperature equilibration

The effect of low-temperature (less than or similar to 120 degrees C) annea ling in an N-2 atmosphere on the electrical and photoelectric properties of it-type Hg0.8Cd0.2Te crystals was studied. Generation of mercury vacancies (acceptors) was shown to be a dominant process; at the same time, diffusio n of Hg interstitials originating from inclusions was also observed. The el ectrical and photoelectric properties of the annealed crystals indicate tha t the defect structure is nonuniform. The low-temperature diffusivity of Pi g depends on the acceptor concentration and exhibits Arrhenius behavior wit h an activation energy Delta E-a similar or equal to 0.7eV.