Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass

Citation
G. Carelli et al., Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass, INT J INFRA, 19(9), 1998, pp. 1191-1199
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
01959271 → ACNP
Volume
19
Issue
9
Year of publication
1998
Pages
1191 - 1199
Database
ISI
SICI code
0195-9271(199809)19:9<1191:TDOIRI>2.0.ZU;2-5
Abstract
We measured the dependence of the reflectivity of InSb crystals upon temper ature in the submillimeter region using monochromatic radiation from an opt ically pumped far infrared (FIR) laser. The measures allowed us to determin e the value of the electron effective mass at low temperatures with radiati ons of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatu res region where only old measures were available.