Molecular dynamics studies of silica wafer bonding

Citation
D. Timpel et al., Molecular dynamics studies of silica wafer bonding, J APPL PHYS, 85(5), 1999, pp. 2627-2635
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
5
Year of publication
1999
Pages
2627 - 2635
Database
ISI
SICI code
0021-8979(19990301)85:5<2627:MDSOSW>2.0.ZU;2-V
Abstract
Molecular dynamics simulations are performed to investigate the atomic proc esses initiated by the adhesion of two silica surfaces, which are covered w ith adsorbates of oxygen, hydrogen or water molecules. The calculations des cribe the mechanism of hydrophilic silicon wafer bonding in terms of empiri cal potentials assumed. The challenge of the macroscopically relevant compu tations is to understand and to predict the formation of covalent bonds as a function of initial silica structures, external forces, adsorbates, and a nnealing temperatures applied. (C) 1999 American Institute of Physics. [S00 21-8979(99)04005-0].