Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure

The microluminescence surface scan technique has been used to investigate a mbipolar carrier diffusion, photon diffusion, and photocarrier recombinatio n in a nominally undoped InGaAs bulk layer lattice matched to InP grown by vapor levitation epitaxy. Measurements taken at different temperatures betw een 75 and 300 K are discussed in terms of the relative contribution of the two distinct mechanisms to the spectrally integrated luminescence intensit y, namely, photon diffusion and photocarrier diffusion. (C) 1999 American I nstitute of Physics. [S0021-8979(99)06304-5].