Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

We report on a double-channel AlGaN/GaN heterostructure field-effect transi stor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor-insulator-semiconductor structure. The ba nd structure and the charge distribution are strongly influenced by the pie zoelectric effect caused by the mismatch between AlGaN and GaN. This new de sign demonstrates that the current carrying capability of AlGaN/GaN HFETs c an be enhanced using multichannel structures. (C) 1999 American Institute o f Physics. [S0021-8979(99)03305-8].