THE MECHANISM OF DEHYDROGENATION OF SINX-H FILMS

We have developed a novel remote plasma enhanced chemical vapour depos ition (RPECVD) process for the deposition of SiNx:H films from hexamet hylcyclotrisilazane [SiNH(CH3)(2)](3) in which not all gases are plasm a excited. The films grown in this manner do not have any carbon-bonde d species. The films contain hydrogen in N-H bonds only. The hydrogen evolution kinetics was studied. It was shown that tile rate of dehydro genation does not depend on the film thickness and depends only on the initial concentration of bonded hydrogen in the film. It was establis hed that the dissociation of N-H bonds is the limiting stage of the de hydrogenation process. An activation energy equal to 60 kJ mol(-1) was determined. This value is lower than the energy of dissociation of N- H bonds. It indicates that the hydrogen evolution process is governed by a cooperative phenomenon proceeding in the network.