P-TYPE AND N-TYPE CUINSE2 THIN-FILMS GROWN BY CLOSE-SPACED VAPOR TRANSPORT

Authors
MASSE G GUENOUN K DJESSAS K GUASTAVINO F
Citation
G. Masse et al., P-TYPE AND N-TYPE CUINSE2 THIN-FILMS GROWN BY CLOSE-SPACED VAPOR TRANSPORT, Thin solid films, 293(1-2), 1997, pp. 45-51
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
293
Issue
1-2
Year of publication
1997
Pages
45 - 51
Database
ISI
SICI code
0040-6090(1997)293:1-2<45:PANCTG>2.0.ZU;2-A
Abstract
p- and n-type CuInSe2 thin films were grown from close-spaced vapour t ransport in a vertical closed tube. The electrical conductivity variat ion of the films from p- to n-type was obtained by a simple adjustment of the source and substrate temperatures during the growth. The depos itions were carried out in the temperature range where the films are n early stoichiometric (approximate to 400 to 580 degrees C). The films were characterized by X-rays, scanning electron microscopy, energy dis persive spectroscopy, optical absorption and Hall effect studies.