Electroluminescence from CdSe microcrystals-doped indium tin oxide thin films

Citation
M. Hayashi et al., Electroluminescence from CdSe microcrystals-doped indium tin oxide thin films, J MATER SCI, 33(19), 1998, pp. 4829-4833
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
33
Issue
19
Year of publication
1998
Pages
4829 - 4833
Database
ISI
SICI code
0022-2461(19981001)33:19<4829:EFCMIT>2.0.ZU;2-E
Abstract
When the DC voltage (4 V cm(-1)) was applied to the CdSe microcrystals dope d indium tin oxide (ITO) thin film prepared by RF-magnetron sputtering meth od, the red colour luminescence was observed. The luminescence spectrum had two peaks of about 710 and 880 nm, and the ascending tail at longer than 9 00 nm. It was considered that the luminescence at 710 and 880 nm is electro luminescence, which may be attributable to the surface defect of CdSe micro crystals. (C) 1998 Kluwer Academic Publishers.