Epitaxial growth of Si by tow-energy DC-plasma chemical vapor deposition

Authors
Mateeva, E Deller, HR Kafader, U Rosenblad, C Von Kanel, H Dommann, A
Citation
E. Mateeva et al., Epitaxial growth of Si by tow-energy DC-plasma chemical vapor deposition, J MAT SCI L, 17(18), 1998, pp. 1545-1547
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
17
Issue
18
Year of publication
1998
Pages
1545 - 1547
Database
ISI
SICI code
0261-8028(19980915)17:18<1545:EGOSBT>2.0.ZU;2-M