Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes

PtSi/p-strained-Si1-xGex (x = 0.19 and x = 0.29) Schottky barrier diodes ha ve been fabricated and characterized for the determination of barrier heigh t, ideality factor and the interface state density distribution with energy . Diodes having an epitaxial layer thickness of 20 and 52 nm were modeled w ith emphasis on comparison with experiment. To achieve better agreement wit h experimental data, an interfacial layer and associated series resistance were included in the model. The capacitance-voltage (C-V) technique has bee n used for the determination of the energy distribution of interface state density. The interface state density distribution for the Si0.81Ge0.19 and Si0.71Ge0.29 diodes is found to decrease with increasing energy from the va lence band edge.