Formation of complex alkoxides to control layer structure in Sr-Bi-M-O (M : Ta or Nb) perovskite thin films

Citation
K. Kato et al., Formation of complex alkoxides to control layer structure in Sr-Bi-M-O (M : Ta or Nb) perovskite thin films, J MAT S-M E, 9(6), 1998, pp. 457-464
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
9
Issue
6
Year of publication
1998
Pages
457 - 464
Database
ISI
SICI code
0957-4522(199812)9:6<457:FOCATC>2.0.ZU;2-I
Abstract
Precursors for layer-structured perovskite thin films of Sr2Bi2Ta3O12.5 Or SBT223, and Sr2Bi2Nb3O12.5 or SBN223 were prepared by the reactions of Sr-B i (2:2) double methoxyethoxide and Ta or Nb methoxyethoxide, followed by pa rtial hydrolysis. By several analytical techniques, such as H-1-, C-13- and Nb-93-NMR (nuclear magnetic resonance) and FTIR (Fourier transform infrare d) the molecular structure of the precursors was found to be similar to the layer-structured perovskite crystal sub-lattice. As a result, the onset of crystallization in the sol-gel derived SBT223 thin films was at a low temp erature of 550 degrees C. By rapid thermal annealing in an oxygen atmospher e, the single-phase perovskite films exhibited preferred (117) orientation. In contrast to the SBT system, the observed number of the pseudo-perovskit e layers of TaO6 octahedral units between Bi2O22+ layers in the SBT223 was three. Despite the elongation of the unit cell along the c-axis, 700 degree s C-heated SBT223 thin film did not exhibit a saturated hysteresis loop due to the small crystallite size.