CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION (VOL 276, PG 147, 1996)

Authors
LEE CH YEH CC HWANG HL HSU KYJ
Citation
Ch. Lee et al., CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION (VOL 276, PG 147, 1996), Thin solid films, 293(1-2), 1997, pp. 334-334
Citations number
1
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
293
Issue
1-2
Year of publication
1997
Pages
334 - 334
Database
ISI
SICI code
0040-6090(1997)293:1-2<334:COPSFP>2.0.ZU;2-X