Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices

Citation
Ny. Fogel' et al., Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices, LOW TEMP PH, 25(2), 1999, pp. 122-125
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
LOW TEMPERATURE PHYSICS
ISSN journal
1063777X → ACNP
Volume
25
Issue
2
Year of publication
1999
Pages
122 - 125
Database
ISI
SICI code
1063-777X(199902)25:2<122:QSEAIE>2.0.ZU;2-V
Abstract
A new type of quantum size effect in metal-semiconductor superlattices is p redicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place . This effect is due to the fact that the probability of metal electron tun neling through a semiconductor layer depends sharply on the electron incide nce angle. The oscillations have been found to exist even in disordered sys tems, provided the electrons in metal layers undergo low-angle scattering o n imperfections. (C) 1999 American Institute of Physics. [S1063-777X(99)006 02-7].