Ks. Hwang, The influence of prefiring conditions on the epitaxy of Pb(Zr,Ti)O-3 filmsby dipping-pyrolysis process, MATER CH PH, 57(3), 1999, pp. 228-231
Pb(Zr,Ti)O-3 (PZT, Pb : Zr : Ti = 1 : 0.52 : 0.48) thin films were prepared
by dipping-pyrolysis process using a mixed solution of lead-, zirconium- a
nd titanium-naphthenates. The solution was spin-coated onto MgO(100) substr
ates and the precursor films were prefired at 200 degrees C; in air or in a
rgon for various holding times, followed by final heat treatment at 750 deg
rees C. Highly oriented (00l)/(h00) PZT films with smooth, crack-free surfa
ces were obtained for all the samples except the films prefired in air for
12 and 24 h. Pyrolysis at a low temperature (200 degrees C) in a non-oxidiz
ing atmosphere (argon) was found to be most important for the epitaxy of pr
oduct films. (C) 1999 Elsevier Science S.A. All rights reserved.