Enhancement in T-c of superconducting BPSCCO thick films due to irradiation of energetic argon ions of dense plasma focus

Citation
P. Agarwala et al., Enhancement in T-c of superconducting BPSCCO thick films due to irradiation of energetic argon ions of dense plasma focus, PHYSICA C, 313(1-2), 1999, pp. 87-92
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
313
Issue
1-2
Year of publication
1999
Pages
87 - 92
Database
ISI
SICI code
0921-4534(19990210)313:1-2<87:EITOSB>2.0.ZU;2-A
Abstract
The highly energetic high fluence argon ions that are generated in dense pl asma focus (DPF) device are used for the first time for the enhancement in T-c of superconducting BPSCCO thick films. These films are in mixed phase 2 212 (T-c = 85 K) and 2223 (T-c = 110 K) prepared by screen printing techniq ue. They are exposed to the ions of DPF axially above the anode at various distances. T-c of the films irradiated at a particular distance have been f ound to increase with maximum of 15 K. XRD peaks also confirm the presence of high T-c (2223) phase of BPSCCO only, for the films for which increase i n T-c is 15 K. (C) 1999 Elsevier Science B.V. All rights reserved.