Previously [J. Appl. Phys. 83, 270 (1998)] the Pauli master equation has be
en argued to constitute an equation suitable for the simulation of steady-s
tate electron transport in semiconductor devices of length L smaller than t
he dephasing length lambda(phi) in the contacts. Here, the master equation
is derived emphasizing the role played by the dissipative interactions of t
he Van Hove-type, by the Markov approximation, and by the Van Hove limit in
establishing irreversibility. An extension of the method to realistic band
structures is also presented. Finally, the approach is applied to simulate
electron transport in a simple one-dimensional Si nin diode at 77 K.