Master-equation approach to the study of electronic transport in small semiconductor devices

Previously [J. Appl. Phys. 83, 270 (1998)] the Pauli master equation has be en argued to constitute an equation suitable for the simulation of steady-s tate electron transport in semiconductor devices of length L smaller than t he dephasing length lambda(phi) in the contacts. Here, the master equation is derived emphasizing the role played by the dissipative interactions of t he Van Hove-type, by the Markov approximation, and by the Van Hove limit in establishing irreversibility. An extension of the method to realistic band structures is also presented. Finally, the approach is applied to simulate electron transport in a simple one-dimensional Si nin diode at 77 K.