Interfacial stability and atomistic processes in the a-C/Si(100) heterostructure system

Authors
Kelires, PC Gioti, M Logothetidis, S
Citation
Pc. Kelires et al., Interfacial stability and atomistic processes in the a-C/Si(100) heterostructure system, PHYS REV B, 59(7), 1999, pp. 5074-5081
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
7
Year of publication
1999
Pages
5074 - 5081
Database
ISI
SICI code
0163-1829(19990215)59:7<5074:ISAAPI>2.0.ZU;2-M
Abstract
We study the interfacial properties of thin amorphous carbon films frown on silicon (100) substrate. By combining experimental spectroscopic ellipsome try and stress measurements and theoretical Monte Carlo simulations, we sho w that significant interdiffusion takes place at the initial stages of grow th, driven by a strain mediated mechanism, and we identify the relevant ato mistic processes. [S0163-1829(99)06507-8].