Electrical transport in superlattices containing InAs quantum dots in GaAsand InP

Selectively-doped heterostructures based on both GaAs and InP containing se veral atomic layers coverage of InAs as oth strained 2D and partially relax ed 3D (quantum dot) have been grown by gas source molecular beam epitaxy an d the transport properties have been investigated. We show that while coherently strained InAs in 2D layers results in increas ed electron mobilities, the formation of 3D quantum dots appear to trap ele ctrons and decrease significantly the mobility of those remaining. The degr ee of trapping is dependent on the size and density of the dots. (C) 1999 A cademic Press.