Rigorous hole band structure calculations of p-type delta-doping superlattices in silicon

Self-consistent hole band structure calculations are performed for p-type d elta-doped quantum wells and superlattices (SLs) in Si by solving the six-b and Luttinger-Kohn effective mass equations, together with Poisson equation , in a plane-wave representation. Nonparabolicities due to couplings betwee n heavy, light, and spin-orbit split bands are fully taken into considerati on. Exchange and correlation effects within the multicomponent hole gas are included in the local density approximation. Results are presented for hol e band structures, Fermi levels, and potentials for p-type delta-doping SLs , in which the acceptor sheet doping concentration and SL period were varie d, Our results are compared with the available experimental data. (C) 1999 Academic Press.