Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes

In this work we report the effects of the growth interruption on the optica l and microscopic propel-ties of InAs/GaAs self-assembled quantum dots grow n by molecular beam epitaxy on (100) and (311)B oriented GaAs substrates. T he growth interruption applied after the deposition of the InAs layer stron gly affects the optical and microscopic properties of the dots, thus provid ing evidence of strong nonequilibrium effects on dot self-assembly. These e ffects are enhanced for dots grown on high-index planes and can be used to tune the emission energy and to improve the luminescence intensity of the d ots. (C) 1999 Academic Press.