Ballistic magnetotransport in a semiconductor microjunction with broken symmetry

The linear and nonlinear magnetotransport response of a ballistic semicondu ctor cross junction with an embedded, symmetry-breaking scatterer is invest igated. As a result of the broken symmetry, the so-called 'bend resistance' is no longer symmetric in the magnetic field. The experimental curve also exhibits a pronounced peak structure. In the nonlinear transport regime, bo th the magnitude and the position of the magnetoresistance peaks are drasti cally influenced by the de current bias. We also observe new magnetoresista nce peaks evolving at high lead currents in some experimental configuration s. (C) 1999 Academic Press.