Citation
Ms. Kagan et al., Lateral transport in boron doped SiGe quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 203-206
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036
→ ACNP
Volume
25
Issue
1-2
Year of publication
1999
Pages
203 - 206
Database
ISI
SICI code
0749-6036(199901/02)25:1-2<203:LTIBDS>2.0.ZU;2-J
Abstract
The temperature dependence of lateral conductivity and hole mobility in bor
on doped Si/SiGe/Si quantum well structures were studied. The conductivity
at the temperatures below 20 K is shown to be due to hopping over B centers
while at higher temperatures it is due to two-stage excitation consisting
of thermal activation of holes from the ground to strain-split B states and
the next hole tunneling into the valence band. (C) 1999 Academic Press.