Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator withorganic-inorganic distributed Bragg reflector

We have realized a reflection-type electro-optic InGaAs/GaAs multiple quant um well (MQW) modulator using an organic-inorganic distributed Bragg reflec tor (DBR). The MQW active layer is embedded in the intrinsic region of a p- i-n diode. The DBR consists of few pairs of CFx/TiOx layers, fabricated by room-temperature ion beam sputtering on the rear side of the device. The re flectivity of the mirror approaches 98% in the infrared spectral region and is centered at the n = 1 exciton resonance of the MQW. ON-OFF driving reve rse voltages of 0.5 and 1.8 V are measured at room temperature. In this ran ge the static response of the device is linear so that it can be used for a nalog electro-optic modulation. (C) 1999 Academic Press.