Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Citation
Jm. Jancu et al., Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP, SUPERLATT M, 25(1-2), 1999, pp. 351-355
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
25
Issue
1-2
Year of publication
1999
Pages
351 - 355
Database
ISI
SICI code
0749-6036(199901/02)25:1-2<351:TDOITI>2.0.ZU;2-W
Abstract
Intersubband optical properties of InGaAs/AlAs quantum heterostructures gro wn on InP are analysed. Our calculations based on a recently developed empi rical tight-binding model show that the system is ideally suited for the ta iloring of optical properties in a wide range. In particular, structures ma tching the frequency requirements of ultra-fast fibre optics communications are presented and discussed. (C) 1999 Academic Press.