Nonlinear properties in InxGa1-xAs/GaAs multiple quantum well laser structures

In this paper we investigated nonlinear properties and lasing in InxGa1-xAs /GaAs multiple quantum wells grown by metal-organic chemical vapour deposit ion. A systematic study, performed by high excitation photoluminescence mea surements as a function of excitation intensity, allowed us to identify the minimum well width for observing stimulated emission from well states. We also determined the threshold for stimulated emission for well and barrier lasing. Radiative recombination energies are identified by using theoretica l data obtained in the effective mass approximation, including boundary con ditions and strain. (C) 1999 Academic Press.