Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

Citation
Jl. Liu et al., Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate, SUPERLATT M, 25(1-2), 1999, pp. 477-479
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
25
Issue
1-2
Year of publication
1999
Pages
477 - 479
Database
ISI
SICI code
0749-6036(199901/02)25:1-2<477:GMGOFS>2.0.ZU;2-G
Abstract
Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si na no-wires is investigated using scanning electron microscopy. This method pr ovides a possible way to fabricate silicon quantum wires. (C) 1999 Academic Press.