Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films

Authors
Bhagwat, S Howson, RP
Citation
S. Bhagwat et Rp. Howson, Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films, SURF COAT, 111(2-3), 1999, pp. 163-171
Citations number
34
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
111
Issue
2-3
Year of publication
1999
Pages
163 - 171
Database
ISI
SICI code
0257-8972(19990129)111:2-3<163:UOTMTF>2.0.ZU;2-1
Abstract
Indium tin oxide films were made with their stoichiometry controlled to giv e optimum electrical and optical properties. They were deposited by d.c. ma gnetron sputtering on glass substrates at room temperature. The mechanical properties of these films were also studied. The initial experiments show t he dependence of resistivity on film thickness. The controlled processes ga ve a resistivity of about 10(-5) Omega m and visible transmission of about 85%. The performance of ITO films can be increased by annealing the films i n argon ambient. (C) 1999 Published by Elsevier Science S.A. All rights res erved.