Effect of the substrate temperature on the deposition of hydrogenated amorphous carbon by PACVD at 35 kHz

Authors
Gago, R Sanchez-Garrido, O Climent-Font, A Albella, JM Roman, E Raisanen, J Rauhala, E
Citation
R. Gago et al., Effect of the substrate temperature on the deposition of hydrogenated amorphous carbon by PACVD at 35 kHz, THIN SOL FI, 338(1-2), 1999, pp. 88-92
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
338
Issue
1-2
Year of publication
1999
Pages
88 - 92
Database
ISI
SICI code
0040-6090(19990129)338:1-2<88:EOTSTO>2.0.ZU;2-L
Abstract
Hydrogenated amorphous carbon films were deposited using a 35 kHz rf-PACVD system varying the substrate temperature between 100 and 300 degrees C. The films were; ocharacterised using ellipsometry, electrical measurements, Ra man spectroscopy, AES, EELS, RES and ERDA analysis. The films present a hig h sp(2) content with a hydrogen content around 40%, which decreases as we r ise the substrate temperature. For temperatures above 200 degrees C, a grap hitization process has been observed. The properties of the films have been compared with those obtained in conventional 13.56 MHz plasma systems. (C) 1999 Elsevier Science S.A. All rights reserved.