Polycrystalline CuInS2 thin films have been prepared by spray pyrolysis of
aqueous solution of copper chloride, indium chloride and thiourea onto heat
ed glass substrates. It is shown that the parameters critical to structural
and optical properties of sprayed CuInS2 films are growth temperature and
ion ratio of Cu/In in spraying solution. Excess of copper in starting solut
ion promotes the recrystallization and growth of crystallites in the film.
The X-ray diffraction patterns confirm that the use of copper-rich solution
s reduces the temperature required for single-phase composition of CuInS2 f
ilms from 380 degrees C (Cu/In = 1) to 290 degrees C (Cu/In = 1.25). The fo
rmation of CuInS2 in spray process and chemical nature of additional phases
in the films are discussed. Growth temperatures in the range of 320-380 de
grees C at Cu/In > 1 are determined as optimal for depositing orientated in
the (112) direction CuInS2 thin films with chalcopyrite structure. Sprayed
chalcopyrite CuInS2 films have absorption coefficient similar to 10(5) cm(
-1) in visible and red region of spectra and optical band gap 1.45 eV. (C)
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