Stress development in amorphous zirconium oxide films prepared by sol-gel processing

Citation
R. Brenier et al., Stress development in amorphous zirconium oxide films prepared by sol-gel processing, THIN SOL FI, 338(1-2), 1999, pp. 136-141
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
338
Issue
1-2
Year of publication
1999
Pages
136 - 141
Database
ISI
SICI code
0040-6090(19990129)338:1-2<136:SDIAZO>2.0.ZU;2-E
Abstract
The stress development in zirconium oxide gel films during annealing betwee n 150 and 400 degrees C has been investigated using thickness and substrate curvature measurements with laser beam reflections. The films' elemental c ontent was determined by Rutherford backscattering spectrometry and their s tructure by X-ray diffraction. It is shown that the main densification mech anisms are polycondensation reactions up to 300 degrees C with acetylaceton e elimination leading to a rather weak stress increase. For temperatures ab ove 300 degrees C the vanishing of acetylacetone favors densification and s tress increase. (C) 1999 Elsevier Science S.A. All rights reserved.