The ageing behaviour of epitaxial YBa2Cu3O7 (YBCO) films an Si (100) with C
eO2/YSZ buffer layers is studied. For the YBCO/CeO2/YSZ/Si system, its agei
ng is weaker than the YBCO/YSZ/Si system. The experimental critical thickne
ss of YBCO films for YBCO/CeO2/YSZ/Si systems is only 40 nm, otherwise crac
ks appear in the film. The formation of cracks is analyzed by means of frac
ture mechanics theory. The estimated thermal stress and elastic strain in c
rack-free YBCO layers reach 2.41 GPa and 1.5% at 77 K, respectively. Deposi
ting another non-superconducting YBCO (YBCO*) film an top of YBCO as a pass
ivation layer makes the critical thickness increase up to 70 nm. These film
s cannot bear surface etching and tempering temperatures higher than 110 de
grees C in lithography. (C) 1999 Elsevier Science S.A. All rights reserved.