Structural and electronic properties of composite BxCyNz nanotubes and heterojunctions

Citation
X. Blase et al., Structural and electronic properties of composite BxCyNz nanotubes and heterojunctions, APPL PHYS A, 68(3), 1999, pp. 293-300
Citations number
50
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
68
Issue
3
Year of publication
1999
Pages
293 - 300
Database
ISI
SICI code
0947-8396(199903)68:3<293:SAEPOC>2.0.ZU;2-J
Abstract
The structure, stability and electronic properties of composite BxCyNz nano tubes and related heterojunctions have been studied using both ab initio an d semi-empirical approaches. Pure BN nanotubes present a very stable quasi particle band gap around 5.5-6.0 eV independent of the tube radius and heli city. The bottom of the conduction bands is controlled by a nearly-free-ele ctronn state localized inside the nanotube, suggesting interesting properti es under doping. In the case of nanotubes with BC2N stoichiometry, we show that in the thermodynamic limit the system is driven towards segregation of pure C and BN sections. This demixing significantly affects the electronic properties of such materials. The same process of segregation into BC3 isl ands is evidenced in the case of B-doped carbon nanotubes. These spontaneou s segregation processes lead to the formation of quantum dots or nanotube h eterojunctions. In particular, C/BN superlattices or isolated junctions hav e been investigated as specific examples of the wide variety of electronic devices that can be realized using such nanotubes.