Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic dec omposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging fr om 600 to 750 degrees C. The SBT thin films were annealed layer by layer du ring the spin-coating process using a rapid thermal annealing (RTA) furnace . The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 degrees C. For the film annealed by RTA furnace at 65 0 degrees C, the remanent polarization (2P(r)) and coercive field (2E(c)) w ere 19.8 mu C/cm(2) and 116 kV/cm, respectively. (C) 1999 American Institut e of Physics. [S0003-6951(99)00309-5].