Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si : B/SiGe/Si heterostructures

Hall-and-Strip measurements on modulation-doped SiGe heterostructures and c ombined Hall and capacitance-voltage measurements on metal-oxide-semiconduc tor (MOS)-gated enhancement mode structures have been used to deduce Hall s cattering factors, r(H), in the Si1-xGex two-dimensional hole gas. At 300 K , r(H) was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing r(H), it is possible to calculate the 300 K drift mobilities in the modulation-do ped structures which are found to be 400 cm(2) V-1 s(-1) at a carrier densi ty of 3.3 X 10(11) cm(-2) for x = 0.2 and 300 cm(2) V-1 s(-1) at 6.3 X 10(1 1) cm(-2) for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMO S control. (C) 1999 American Institute of Physics. [S0003-6951(99)03509-3].