Modified Stranski-Krastanov growth in stacked layers of self-assembled islands

Authors
Schmidt, OG Kienzle, O Hao, Y Eberl, K Ernst, F
Citation
Og. Schmidt et al., Modified Stranski-Krastanov growth in stacked layers of self-assembled islands, APPL PHYS L, 74(9), 1999, pp. 1272-1274
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
9
Year of publication
1999
Pages
1272 - 1274
Database
ISI
SICI code
0003-6951(19990301)74:9<1272:MSGISL>2.0.ZU;2-X
Abstract
In a stack of vertically aligned Stranski-Krastanov grown islands, the crit ical thickness for planar growth for all but the initial dot layer is reduc ed, if the thickness of the spacer layer t(s) is smaller than a certain val ue t(0). We present structural and photoluminescence results on the basis o f the extensively studied lattice-mismatched material system Si/Ge. (C) 199 9 American Institute of Physics. [S0003-6951(99)04409-5].