Growth and characterization of small band gap (similar to 0.6 eV) InGaAsN layers on InP

We demonstrate the growth of small band gap (E (g)similar to 0.6 eV) strain ed and lattice matched single crystal InGaAsN alloys on InP substrates. InG aAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen s ource. Lattice-matched, 0.5-mu m-thick InGaAsN layers with smooth surface m orphologies and abrupt interfaces were achieved. Low temperature photolumin escence measurements reveal a band gap emission wavelength of 1.9 mu m (at 20 K) for lattice matched InGaAsN (N similar to 2%). Tensile strained In0.5 3Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 mu m at 20 K are also reported. (C) 1999 American Institute of Physics. [S 0003-6951(99)04109-1].